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Fast Switching N Channel MOSFET HUASHUO HSH4070 Featuring Advanced Trench Technology for Performance

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Fast Switching N Channel MOSFET HUASHUO HSH4070 Featuring Advanced Trench Technology for Performance

Drain to Source Voltage : 40V

Current - Continuous Drain(Id) : 170A

Operating Temperature - : -55℃~+150℃

RDS(on) : 2.2mΩ@4.5V,20A

Gate Threshold Voltage (Vgs(th)) : 1.2V

Reverse Transfer Capacitance (Crss@Vds) : 112pF@20V

Number : 1 N-channel

Input Capacitance(Ciss) : 3.872nF@20V

Pd - Power Dissipation : 178W

Gate Charge(Qg) : 68nC@10V

Description : N-Channel 40V 170A 178W Surface Mount TO-263

Mfr. Part # : HSH4070

Model Number : HSH4070

Package : TO-263

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Product Overview

The HSH4070 is an N-Channel Fast Switching MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing applications. This RoHS and Halogen-Free compliant component is 100% UIS Tested for reliability.

Product Attributes

Brand: HSH
Type: N-Channel MOSFET
Switching Speed: Fast
Certifications: RoHS and Halogen-Free Compliant
Testing: 100% UIS Tested
Technology: Advanced Trench Technology

Technical Specifications

Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS (Drain-Source Voltage)				40	V
VGS (Gate-Source Voltage)				±20	V
ID@TC=25 (Continuous Drain Current, VGS @ 10V)				170	A
ID@TC=100 (Continuous Drain Current, VGS @ 10V)				142	A
IDM (Pulsed Drain Current)				400	A
EAS (Single Pulse Avalanche Energy)				462	mJ
IAS (Avalanche Current)				43	A
PD@TC=25 (Total Power Dissipation)				178	W
TSTG (Storage Temperature Range)		-55		150
TJ (Operating Junction Temperature Range)		-55		150
Thermal Data
RJA (Thermal Resistance Junction-Ambient)			---	50	/W
RJC (Thermal Resistance Junction-Case)			---	0.7	/W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS (Drain-Source Breakdown Voltage)	VGS=0V , ID=250uA	40	---	---	V
RDS(ON) (Static Drain-Source On-Resistance)	VGS=10V , ID=20A		2.2	2.6	m
RDS(ON) (Static Drain-Source On-Resistance)	VGS=4.5V , ID=20A		2.8	3.6	m
VGS(th) (Gate Threshold Voltage)	VGS=VDS , ID =250uA	1.2	1.6	2.2	V
IDSS (Drain-Source Leakage Current)	VDS=32V , VGS=0V , TJ=25		---	1	uA
IDSS (Drain-Source Leakage Current)	VDS=32V , VGS=0V , TJ=55		---	5	uA
IGSS (Gate-Source Leakage Current)	VGS=±20V , VDS=0V		---	±100	nA
gfs (Forward Transconductance)	VDS=5V , ID=20A		53	---	S
Rg (Gate Resistance)	VDS=0V , VGS=0V , f=1MHz		1.9	---
Qg (Total Gate Charge)	VDS=15V , VGS=10V , ID=20A		68	---	nC
Qgs (Gate-Source Charge)			10.3	---	nC
Qgd (Gate-Drain Charge)			14.5	---	nC
Td(on) (Turn-On Delay Time)	VDD=15V , VGS=10V , RG=3.3, ID=20A		11.5	---	ns
Tr (Rise Time)			40.3	---	ns
Td(off) (Turn-Off Delay Time)			44.5	---	ns
Tf (Fall Time)			26.4	---	ns
Ciss (Input Capacitance)	VDS=20V , VGS=0V , f=1MHz		3872	---	pF
Coss (Output Capacitance)			1219	---	pF
Crss (Reverse Transfer Capacitance)			112	---	pF
Diode Characteristics
IS (Continuous Source Current)	VG=VD=0V , Force Current		---	130	A
VSD (Diode Forward Voltage)	VGS=0V , IS=1A , TJ=25		---	1.2	V

Notes:
1. Tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.5mH, IAS=43A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
6. Package limitation current is 210A.

2410121655_HUASHUO-HSH4070_C5341705.pdf

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