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N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability

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N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability

Drain to Source Voltage : 40V

Current - Continuous Drain(Id) : 230A

Operating Temperature - : -55℃~+150℃

RDS(on) : 2mΩ@4.5V

Gate Threshold Voltage (Vgs(th)) : 2.2V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 222pF

Number : 1 N-channel

Output Capacitance(Coss) : 2.119nF

Input Capacitance(Ciss) : 6.81nF

Pd - Power Dissipation : 90W

Gate Charge(Qg) : 128nC@10V

Description : N-Channel 40V 230A 90W PRPAK5x6-8L

Mfr. Part # : HSBA4086

Model Number : HSBA4086

Package : PRPAK5x6-8L

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Product Overview

The HSBA4086 is a high-performance N-Channel 40V Fast Switching MOSFET designed for demanding applications. Featuring advanced trench technology, it offers low gate charge, high current capability, and fast switching characteristics. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS) for synchronous rectification, DC/DC converters, and Or-ing applications. It is RoHS and Halogen-Free compliant.

Product Attributes

Brand: HS-Semi
Type: N-Channel MOSFET
Voltage Rating: 40V
Switching Speed: Fast
Compliance: RoHS and Halogen-Free
Technology: Advanced Trench Technology

Technical Specifications

Model	Parameter	Conditions	Min.	Typ.	Max.	Units
HSBA4086	Drain-Source Breakdown Voltage (BVDSS)	VGS=0V , ID=250uA	40	---	---	V
	Static Drain-Source On-Resistance (RDS(ON))	VGS=10V , ID=20A	---	0.8	1.2	m
	Static Drain-Source On-Resistance (RDS(ON))	VGS=4.5V , ID=20A	---	1.2	2.0	m
	Gate Threshold Voltage (VGS(th))	VGS=VDS , ID =250uA	1.2	1.7	2.2	V
	Drain-Source Leakage Current (IDSS)	VDS=32V , VGS=0V , TJ=25	---	---	1	uA
	Drain-Source Leakage Current (IDSS)	VDS=32V , VGS=0V , TJ=55	---	---	5	uA
	Gate-Source Leakage Current (IGSS)	VGS=20V , VDS=0V	---	---	100	nA
	Gate Resistance (Rg)	VDS=0V , VGS=0V , f=1MHz	---	1.3	---
	Total Gate Charge (Qg)	VDS=20V , VGS=10V , ID=20A	---	128	---	nC
	Total Gate Charge (Qg)	VGS=4.5V	---	67	---	nC
	Gate-Source Charge (Qgs)	VDS=20V , VGS=10V , ID=20A	---	17	---	nC
	Gate-Drain Charge (Qgd)	VDS=20V , VGS=10V , ID=20A	---	29	---	nC
Absolute Maximum Ratings	Drain-Source Voltage (VDS)	---	---	---	40	V
	Gate-Source Voltage (VGS)	---	---	---	20	V
	Continuous Drain Current (ID@TC=25)	VGS @ 10V	---	---	230	A
	Continuous Drain Current (ID@TC=100)	VGS @ 10V	---	---	140	A
Thermal Data	Thermal Resistance Junction-Ambient (RJA)	---	---	---	63	/W
	Thermal Resistance Junction-Case (RJC)	---	---	---	1.4	/W
	Total Power Dissipation (PD@TC=25)	---	---	---	90	W
	Storage Temperature Range (TSTG)	---	-55	---	150

2410121653_HUASHUO-HSBA4086_C2987714.pdf

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