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Fast switching p channel mosfet huashuo hss6107 60 volt with green device compliance and low gate charge

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Fast switching p channel mosfet huashuo hss6107 60 volt with green device compliance and low gate charge

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 1.7A

Operating Temperature - : -55℃~+150℃

RDS(on) : 180mΩ@4.5V,1A

Gate Threshold Voltage (Vgs(th)) : 2.5V

Reverse Transfer Capacitance (Crss@Vds) : 38pF@15V

Number : 1 P-Channel

Input Capacitance(Ciss) : 531pF@15V

Pd - Power Dissipation : 1W

Gate Charge(Qg) : 4.6nC@4.5V

Description : P-Channel 60V 1.7A 1W Surface Mount SOT-23L

Mfr. Part # : HSS6107

Model Number : HSS6107

Package : SOT-23L

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Product Overview

The HSS6107 is a P-channel 60V fast-switching MOSFET featuring high cell density trenched technology. It offers excellent R_DS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include 100% EAS Guaranteed, super low gate charge, and excellent C_dv/dt effect decline.

Product Attributes

Brand: HS-Semi
Product Type: P-Channel MOSFET
Switching Speed: Fast Switching
Certifications: RoHS, Green Product
Availability: Green Device Available

Technical Specifications

Parameter	Conditions	Min.	Typ.	Max.	Units
V_DS	Drain-Source Voltage			-60	V
V_GS	Gate-Source Voltage			±20	V
I_D@T_A=25	Continuous Drain Current, V_GS @ -10V			-1.7	A
I_D@T_A=70	Continuous Drain Current, V_GS @ -10V			-1.4	A
I_DM	Pulsed Drain Current			-7	A
P_D@T_A=25	Total Power Dissipation			1	W
T_STG	Storage Temperature Range	-55		150
T_J	Operating Junction Temperature Range	-55		150
R_JA	Thermal Resistance Junction-Ambient			125	/W
R_JC	Thermal Resistance Junction-Case			80	/W
BVDSS	Drain-Source Breakdown Voltage (V_GS=0V, I_D=-250µA)	-60			V
ΔBVDSS/ΔT_J	BVDSS Temperature Coefficient (Ref. to 25, I_D=-1mA)		-0.021		V/
R_DS(ON),max	Static Drain-Source On-Resistance (V_GS=-10V, I_D=-1.5A)			180	mΩ
R_DS(ON),max	Static Drain-Source On-Resistance (V_GS=-4.5V, I_D=-1A)			266	mΩ
V_GS(th)	Gate Threshold Voltage (V_GS=V_DS, I_D =-250µA)	-1.0		-2.5	V
ΔV_GS(th)/ΔT_J	VGS(th) Temperature Coefficient		4.08		mV/
I_DSS	Drain-Source Leakage Current (V_DS=-48V, V_GS=0V, T_J=25)			1	µA
I_DSS	Drain-Source Leakage Current (V_DS=-48V, V_GS=0V, T_J=55)			5	µA
I_GSS	Gate-Source Leakage Current (V_GS=±20V, V_DS=0V)			±100	nA
g_fs	Forward Transconductance (V_DS=-5V, I_D=-1.5A)		5.9		S
Q_g	Total Gate Charge (-4.5V) (V_DS=-20V, V_GS=-4.5V, I_D=-1.5A)		4.6		nC
Q_gs	Gate-Source Charge		1.4		nC
Q_gd	Gate-Drain Charge		1.62		nC
T_d(on)	Turn-On Delay Time (V_DS=-15V, V_GS=-10V, R_G=3.3Ω, I_D=-1A)		17.4		ns
T_r	Rise Time		5.4		ns
T_d(off)	Turn-Off Delay Time		37.2		ns
T_f	Fall Time		2.4		ns
C_iss	Input Capacitance (V_DS=-15V, V_GS=0V, f=1MHz)		531		pF
C_oss	Output Capacitance		59		pF
C_rss	Reverse Transfer Capacitance		38		pF
I_S	Continuous Source Current (VG=VD=0V, Force Current)			-1.7	A
I_SM	Pulsed Source Current			-7	A
V_SD	Diode Forward Voltage (V_GS=0V, I_S=-1A, T_J=25)			-1.2	V
Part Number		HSS6107
Package		SOT-23L
Packaging		3000/Tape&Reel

2409291036_HUASHUO-HSS6107_C508450.pdf

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