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Plastic Encapsulated Switching Diode JSCJ AD-BAW56 with High Switching Speed and Low Reverse Current

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Plastic Encapsulated Switching Diode JSCJ AD-BAW56 with High Switching Speed and Low Reverse Current

Non-Repetitive Peak Forward Surge Current : 2A

Reverse Leakage Current (Ir) : 2.5uA@70V

Reverse Recovery Time (trr) : 6ns

Operating Junction Temperature Range : -55℃~+150℃@(Tj)

Diode Configuration : 1 Pair Common Anode

Voltage - DC Reverse (Vr) (Max) : 70V

Pd - Power Dissipation : 225mW

Voltage - Forward(Vf@If) : 1.25V@150mA

Current - Rectified : 200mA

Description : Diode Array 1 Pair Common Anode 70V 200mA Surface Mount SOT-23

Mfr. Part # : AD-BAW56

Model Number : AD-BAW56

Package : SOT-23

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Product Overview

The AD-BAW56/V70/V99 is a plastic-encapsulated switching diode designed for general-purpose switching applications. It offers high switching speed and high conductance, and is AEC-Q101 qualified.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. (JSCJ)
  • Origin: China
  • Certifications: AEC-Q101 qualified

Technical Specifications

ModelPeak Repetitive Reverse Voltage (VRRM)Forward Continuous Current (IFM)Non-Repetitive Peak Forward Surge Current (IFSM) @ t = 8.3msPower Dissipation (PD)Reverse Breakdown Voltage (VBR) @ IR = 100AForward Voltage (VF1) @ IF = 1mAForward Voltage (VF2) @ IF = 10mAForward Voltage (VF3) @ IF = 50mAForward Voltage (VF4) @ IF = 150mAReverse Current (IR) @ VR = 70VCapacitance (CT) @ VR = 0V, f = 1MHzReverse Recovery Time (trr) @ IF = IR = 10mA, Irr = 1mA, RL = 100
AD-BAW56/V70/V9970 V200 mA2 A225 mW70 V0.715 V0.855 V1 V1.25 V2.5 A1.5 pF6 ns

2410121913_JSCJ-AD-BAW56_C2975581.pdf


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