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Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for Motor and Gate Driving

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Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for Motor and Gate Driving

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 20nA

Pd - Power Dissipation : 1.5W

Transition frequency(fT) : 120MHz

type : PNP

Current - Collector(Ic) : 4.3A

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 60V 4.3A 120MHz 1.5W Surface Mount SOT-89

Mfr. Part # : ZXTP2012ZTA

Model Number : ZXTP2012ZTA

Package : SOT-89

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Product Overview

The ZXTP2012Z is a 60V PNP low saturation transistor in a SOT89 package, offering high continuous current capability of up to -4.3A and a low equivalent on-resistance (RSAT = 32m). It features a low saturation voltage (VCE(sat) < -65mV @ IC = -1A) and specified hFE up to -10A for high current gain hold-up. This device is suitable for various applications including emergency lighting, motor driving, backlight inverters, power switches, and gate driving MOSFETs and IGBTs. It is a 'Green' device, totally lead-free, and fully RoHS compliant.

Product Attributes

Brand: Diodes Incorporated
Package: SOT89
Material: Molded Plastic, "Green" Molding Compound
Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
Complementary NPN Type: DIODES ZXTN2010Z
Automotive-Compliant Part Available: ZXTP2012ZQ

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Base Voltage	VCBO	-100	V
Collector-Emitter Voltage	VCEO	-60	V
Emitter-Base Voltage	VEBO	-7	V
Base Current	IB	-2	A
Continuous Collector Current	IC	-4.3	A
Peak Pulse Current	ICM	-15	A
Power Dissipation (Note 5)	PD	1.8	W
Power Dissipation (Note 6)	PD	1.5	W
Power Dissipation (Note 7)	PD	2.1	W
Thermal Resistance, Junction to Ambient (Note 5)	RJA	125	C/W
Thermal Resistance, Junction to Ambient (Note 6)	RJA	83	C/W
Thermal Resistance, Junction to Ambient (Note 7)	RJA	60	C/W
Thermal Resistance, Junction to Case (Note 5)	RJC	21	C/W
Thermal Resistance, Junction to Leads (Note 8)	RJL	3.23	C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Collector-Base Breakdown Voltage	BVCBO	-100	V	IC = -100A
Collector-Emitter Breakdown Voltage (Note 9)	BVCER	-100	V	IC = -1A, RB 1k
Collector-Emitter Breakdown Voltage (Note 9)	BVCEO	-60	V	IC = -10mA
Emitter-Base Breakdown Voltage	BVEBO	-7	V	IE = -100A
Collector Cutoff Current	ICBO	-1	nA	VCB = -80V
Collector Cutoff Current	ICBO	-500	nA	VCB = -80V, TA = +100C
Collector Cutoff Current	ICER	-1	nA	VCB = -80V, R 1k
Collector Cutoff Current	ICER	-500	nA	VCB = -80V, TA = +100C, R 1k
Emitter Cutoff Current	IEBO	-1	nA	VEB = -6V
DC Current Transfer Static Ratio (Note 9)	hFE	100		IC = -10mA, VCE = -1V
DC Current Transfer Static Ratio (Note 9)	hFE	250		IC = -2A, VCE = -1V
DC Current Transfer Static Ratio (Note 9)	hFE	90		IC = -5A, VCE = -1V
DC Current Transfer Static Ratio (Note 9)	hFE	30		IC = -10A, VCE = -1V
Collector-Emitter Saturation Voltage (Note 9)	VCE(sat)	-14	mV	IC = -100mA, IB = -10mA
Collector-Emitter Saturation Voltage (Note 9)	VCE(sat)	-65	mV	IC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage (Note 9)	VCE(sat)	-110	mV	IC = -2A, IB = -200mA
Collector-Emitter Saturation Voltage (Note 9)	VCE(sat)	-215	mV	IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage (Note 9)	VBE(sat)	-950	mV	IC = -5A, IB = -500mA
Base-Emitter Turn-on Voltage (Note 9)	VBE(on)	-840	mV	IC = -5A, VCE = -1V
Transitional Frequency (Note 9)	fT	120	MHz	IC = -100mA, VCE = -10V, f = 50MHz
Output Capacitance	Cobo	48	pF	VCB = -10V, f = 1MHz
Switching Time	ton	39	ns	VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA
Switching Time	toff	370	ns	VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA

2412251000_DIODES-ZXTP2012ZTA_C122574.pdf

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