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Medium Power NPN Transistor DIODES MMBTA06-7-F in SOT23 Package Suitable for Amplification Switching

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Medium Power NPN Transistor DIODES MMBTA06-7-F in SOT23 Package Suitable for Amplification Switching

Emitter-Base Voltage(Vebo) : 4V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 350mW

Transition frequency(fT) : 100MHz

type : NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 80V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 350mW Surface Mount SOT-23

Mfr. Part # : MMBTA06-7-F

Model Number : MMBTA06-7-F

Package : SOT-23

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Product Overview

The MMBTA05 / MMBTA06 are NPN medium power transistors in a SOT23 package. They are ideal for low power amplification and switching applications. These devices feature epitaxial planar die construction and are complementary to PNP types MMBTA55 and MMBTA56. They are also available in AEC-Q101 qualified versions (MMBTA05Q/MMBTA06Q) suitable for automotive applications.

Product Attributes

Brand: Diodes Incorporated
Package: SOT23
Material: Molded Plastic, "Green" Molding Compound
Certifications: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free ("Green" Device), AEC-Q101 qualified (for Q variants)

Technical Specifications

Characteristic	Symbol	MMBTA05	MMBTA06	Unit	Test Condition
Absolute Maximum Ratings
Collector-Base Voltage	VCBO	60	80	V
Collector-Emitter Voltage	VCEO	60	80	V
Emitter-Base Voltage	VEBO	4.0		V
Collector Current	IC	500		mA
Peak Collector Current	ICM	1		A
Thermal Characteristics
Power Dissipation	PD	310 (Note 5) / 350 (Note 6)		mW	@TA = +25C, unless otherwise specified.
Thermal Resistance, Junction to Ambient	RJA	403 (Note 5) / 357 (Note 6)		C/W	@TA = +25C, unless otherwise specified.
Thermal Resistance, Junction to Leads	RJL	350		C/W	@TA = +25C, unless otherwise specified.
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150		C
Electrical Characteristics
Collector-Base Breakdown Voltage	BVCBO	60	80	V	IC = 100A, IE = 0
Collector-Emitter Breakdown Voltage	BVCEO	60	80	V	IC = 10.0mA, IB = 0
Emitter-Base Breakdown Voltage	BVEBO	4.0		V	IE = 100 A, IC = 0
Collector Cutoff Current	ICBO	100		nA	VCB = 60V, IE = 0 (MMBTA05) / VCB = 80V, IE = 0 (MMBTA06)
Collector Cutoff Current	ICES	100		nA	VCE = 60V, IBO = 0V (MMBTA05) / VCE = 80V, IBO = 0V (MMBTA06)
DC Current Gain	hFE	100			IC = 10mA, VCE = 1.0V / IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage	VCE(sat)	0.25		V	IC = 100mA, IB = 10mA
Base-Emitter Turn-On Voltage	VBE(on)	1.2		V	IC = 100mA, VCE = 1.0V
Current Gain-Bandwidth Product	fT	100		MHz	VCE = 2.0V, IC = 10mA, f = 100MHz

2412251004_DIODES-MMBTA06-7-F_C151597.pdf

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