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NPN Low Saturation Transistor DIODES FMMT619TA Offering High Collector Current and Low On Resistance

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NPN Low Saturation Transistor DIODES FMMT619TA Offering High Collector Current and Low On Resistance

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 625mW

Transition frequency(fT) : 165MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 2A

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 50V 2A 165MHz 625mW Surface Mount SOT-23

Mfr. Part # : FMMT619TA

Model Number : FMMT619TA

Package : SOT-23

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FMMT619 50V NPN Silicon Low Saturation Transistor

The FMMT619 is a 50V NPN silicon low saturation transistor designed for various electronic applications. It offers a continuous collector current of 2A, low saturation voltage (VCE(sat) < 200mV @ 1A), and a low equivalent on-resistance (RCE(sat) = 68m). This device is suitable for MOSFET gate driving, DC-DC/DC-AC converters, regulators, LED drivers, and motor controls. It is available in a SOT23 package and is RoHS compliant and halogen-free.

Product Attributes

Brand: DIODES
Package: SOT23
Material: Molded Plastic, Green Molding Compound
Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
Automotive-Compliant Part Available: FMMT619Q (Separate Datasheet)

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Absolute Maximum Ratings
Collector-Base Voltage	VCBO	50	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	7	V
Continuous Collector Current	IC	2	A
Peak Pulse Current	ICM	6	A
Base Current	IB	500	mA
Thermal Characteristics
Power Dissipation (Note 5)	PD	625	mW	@TA = +25C, mounted on 25mm x 25mm FR4 PCB
Power Dissipation (Note 6)	PD	806	mW	@TA = +25C, measured at t 5 sec
Thermal Resistance, Junction to Ambient (Note 5)	RJA	200	C/W
Thermal Resistance, Junction to Ambient (Note 6)	RJA	155	C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Electrical Characteristics
Collector-Base Breakdown Voltage	BVCBO	50	V	IC = 100A
Collector-Emitter Breakdown Voltage (Note 8)	BVCEO	50	V	IC = 10mA
Emitter-Base Breakdown Voltage	BVEBO	7	V	IE = 100A
Collector Cut-off Current	ICBO	100	nA	VCB = 40V
Emitter Cut-off Current	IEBO	100	nA	VEB = 6V
Collector Emitter Cut-off Current	ICES	100	nA	VCES = 40V
Static Forward Current Transfer Ratio	hFE	200-450		IC = 10mA, VCE = 2V (Min Typ Max)
Static Forward Current Transfer Ratio	hFE	225-400		IC = 200mA, VCE = 2V (Min Typ Max)
Static Forward Current Transfer Ratio	hFE	100-225		IC = 1A, VCE = 2V (Min Typ Max)
Static Forward Current Transfer Ratio	hFE	40		IC = 2A, VCE = 2V (Typ)
Collector-Emitter Saturation Voltage	VCE(sat)	< 200	mV	IC = 1A, IB = 10mA (Max)
Collector-Emitter Saturation Voltage	VCE(sat)	< 220	mV	IC = 2A, IB = 50mA (Max)
Base-Emitter Saturation Voltage	VBE(sat)	0.87-1.0	V	IC = 2A, IB = 50mA (Typ Max)
Base-Emitter Turn-On Voltage	VBE(on)	0.82-1.0	V	IC = 2A, VCE = 2V (Typ Max)
Transition Frequency	fT	100-165	MHz	IC = 50mA, VCE = 10V, f = 100MHz (Min Typ)
Collector Output Capacitance	Cobo	12-20	pF	VCB = 10V, f = 1MHz (Typ Max)
Turn-On Time	ton	170	ns	VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA (Typ)
Turn-Off Time	toff	750	ns	VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA (Typ)

2412251005_DIODES-FMMT619TA_C15331.pdf

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