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AC Power Control Device KY BTA16-800B TRIAC with 16A RMS Current and 1000V Peak Off State Voltage

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AC Power Control Device KY BTA16-800B TRIAC with 16A RMS Current and 1000V Peak Off State Voltage

Holding Current (Ih) : 50mA

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.5V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 16A

Peak off - state voltage(Vdrm) : 1kV

Current - Surge(Itsm@f) : 180A

Operating Temperature : -40℃~+125℃

Gate Trigger Voltage (Vgt) : 1.5V

Description : 50mA 50mA 1kV TO-220A TRIACs RoHS

Mfr. Part # : BTA16-800B

Model Number : BTA16-800B

Package : TO-220A

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BTA/BTB16 Series TRIACs

The BTA/BTB16 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance semiconductor devices designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 16A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

Brand: ShenZhenHanKingyuan Electronic
Origin: Shenzhen
Product Series: BTA/BTB16 Series
TRIAC Type: 3 Quadrants, 4 Quadrants
Available Packages: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263

Technical Specifications

Symbol	Parameter	Conditions	BTA16/BTB16-600	BTA16/BTB16-800	Unit
VDRM	Repetitive Peak Off-State Voltage		800	1000	V
VRRM	Repetitive Peak Off-State Voltage		800	1000	V
IT(RMS)	R.M.S On-State Current	Tc=110C	16	16	A
ITSM	Surge On-State Current		170/180	170/180	A
It	It for fusing	Tp=10ms	116	116	As
PG(AV)	Average Gate Power Dissipation	Tj=125C	1	1	W
IGM	Peak Gate Current	Tj=125C, tp=20us	4	4	A
Tj	Operating Junction Temperature		-40~125	-40~125	C
TSTG	Storage Temperature		-40~150	-40~150	C
IDRM	Repetitive Peak Off-State Current	Tj=25C	5	5	uA
IDRM	Repetitive Peak Off-State Current	Tc=125C	1	1	mA
IRRM	Repetitive Peak Reverse Current	Tc=25C	5	5	uA
IRRM	Repetitive Peak Reverse Current	Tc=125C	1	1	mA
VTM	Forward "on" voltage	IT=23A, tp=380us	1.5	1.5	V
VGT	Gate trigger voltage	VD=12V ,RL=30	1.5	1.5	V
di/dt	Critical rate of rise of on- state current	I,II,III F=100Hz, IG=2xIGT, tr100ns	50	50	A/us
di/dt	Critical rate of rise of on- state current	IV	10	10	A/us
IGT	Gate trigger current	I,II,III VD=12V, RL=30	10 / 25 / 50 / 25 / 50	10 / 25 / 50 / 25 / 50	mA
IGT	Gate trigger current	IV	50 / 100	50 / 100	mA
IH	Holding current	IT=0.2A	25 / 35 / 50 / 25 / 50	25 / 35 / 50 / 25 / 50	mA
VGD	Gate non-trigger voltage	VD=VDRM, TJ=125C,RL=3.3K	0.2	0.2	V
dv/dt	Critical-rate of rise of commutation voltage	TJ=125C, VD=2/3VDRM, Gate	100 / 400 / 1000 / 200 / 400	100 / 400 / 1000 / 200 / 400	V/us

2410311002_KY-BTA16-800B_C7437431.pdf

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