| Inverter Part |
| Supply Voltage (VPN) | Applied between P - NU, NV, NW | | | 450 | V | |
| Supply Voltage (Surge) (VPN(Surge)) | Applied between P - NU, NV, NW | | | 500 | V | |
| Collector - Emitter Voltage (VCES) | | | | 600 | V | |
| Collector Current (IC) | TC = 25C, TJ 150C | | | 15 | A | Each IGBT |
| Collector Current (Peak) (ICP) | TC = 25C, TJ 150C, Under 1 ms Pulse Width | | | 30 | A | Each IGBT (Note 4) |
| Collector Dissipation (PC) | TC = 25C per One Chip | | | 38 | W | (Note 4) |
| Operating Junction Temperature (TJ) | | -40 | | 150 | C | |
| Collector - Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 15 A, TJ = 25C | | 1.60 | 2.20 | V | |
| Switching Times (tON) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | | 0.40 | 0.80 | ms | High-Side (Note 6) |
| Switching Times (tOFF) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | | 0.85 | 1.35 | ms | High-Side (Note 6) |
| Switching Times (tON) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | | 0.45 | 0.85 | ms | Low-Side (Note 6) |
| Switching Times (tOFF) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | | 0.90 | 1.40 | ms | Low-Side (Note 6) |
| Collector - Emitter Leakage Current (ICES) | VCE = VCES | | | 1 | mA | |
| Control Part |
| Control Supply Voltage (VDD) | Applied between VDD(H), VDD(L) - COM | | | 20 | V | |
| High-Side Control Bias Voltage (VBS) | Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) | | | 20 | V | |
| Input Signal Voltage (VIN) | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM | -0.3 | | VDD + 0.3 | V | |
| Fault Output Supply Voltage (VFO) | Applied between VFO - COM | -0.3 | | VDD + 0.3 | V | |
| Fault Output Current (IFO) | Sink Current at VFO pin | | | 1 | mA | |
| Current-Sensing Input Voltage (VSC) | Applied between CSC - COM | -0.3 | | VDD + 0.3 | V | |
| Quiescent VDD Supply Current (IQDDH) | VDD(H) = 15 V, IN(UH,VH,WH) = 0 V | | | 0.10 | mA | VDD(H) - COM |
| Quiescent VDD Supply Current (IQDDL) | VDD(L) = 15 V, IN(UL,VL, WL) = 0 V | | | 2.65 | mA | VDD(L) - COM |
| Operating VDD Supply Current (IPDDH) | VDD(H) = 15 V, fPWM = 20 kHz, duty = 50%, One PWM Sig- nal Input for High-Side | | | 0.15 | mA | VDD(H) - COM |
| Operating VDD Supply Current (IPDDL) | VDD(L) = 15 V, fPWM = 20 kHz, duty = 50%, One PWM Sig- nal Input for Low-Side | | 4.00 | mA | VDD(L) - COM |
| Quiescent VBS Supply Current (IQBS) | VBS = 15 V, IN(UH, VH, WH) = 0 V | | | 0.30 | mA | VB(U) - VS(U), etc. |
| Operating VBS Supply Current (IPBS) | VDD = VBS = 15 V, fPWM = 20 kHz, Duty = 50%, One PWM Signal Input for High-Side | | | 2.00 | mA | VB(U) - VS(U), etc. |
| Bootstrap Diode Part |
| Maximum Repetitive Reverse Voltage (VRRM) | | | | 600 | V | |
| Forward Current (IF) | TC = 25C, TJ 150C | | | 0.5 | A | |
| Forward Current (Peak) (IFP) | TC = 25C, TJ 150C, Under 1 ms Pulse Width | | | 2.0 | A | (Note 4) |
| Operating Junction Temperature (TJ) | | -40 | | 150 | C | |
| Total System |
| Self-Protection Supply Voltage Limit (VPN(PROT)) | Short-Circuit Protection Capability | | | 400 | V | TJ = 150C, Non-Repetitive, < 2 ms (Note 4) |
| Module Case Operation Temperature (TC) | | -40 | | 125 | C | See Figure 2 |
| Storage Temperature (TSTG) | | -40 | | 125 | C | |
| Isolation Voltage (VISO) | 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate | | 2000 | | Vrms | |
| Junction to Case Thermal Resistance (Rth(j-c)Q) | Inverter IGBT Part (per 1 / 6 module) | | | 3.20 | C / W | (Note 5) |
| Junction to Case Thermal Resistance (Rth(j-c)F) | Inverter FWDi Part (per 1 / 6 module) | | | 4.00 | C / W | |
