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650V IGBT AOS AOD5B65M1 featuring low VCE SAT and excellent EMI behavior for hard switching applications

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650V IGBT AOS AOD5B65M1 featuring low VCE SAT and excellent EMI behavior for hard switching applications

Td(off) : 106ns

Pd - Power Dissipation : 28W

Td(on) : 8.5ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 13pF

IGBT Type : -

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5.1V@1mA

Gate Charge(Qg) : 14nC

Operating Temperature : -55℃~+150℃@(Tj)

Reverse Recovery Time(trr) : 195ns

Switching Energy(Eoff) : 70uJ

Turn-On Energy (Eon) : 80uJ

Pulsed Current- Forward(Ifm) : 15A

Output Capacitance(Coes) : 36pF

Description : IGBT 650V 10A Surface Mount TO-252

Mfr. Part # : AOD5B65M1

Model Number : AOD5B65M1

Package : TO-252

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Product Overview

The AOD5B65M1 is a 650V, 5A Alpha IGBT featuring a fast and soft recovery anti-parallel diode. This component utilizes the latest AlphaIGBT ( IGBT) technology and offers a 650V breakdown voltage. It is designed for high efficiency with low VCE(SAT) and low turn-off switching loss, while also providing excellent EMI behavior and high short-circuit ruggedness. Ideal for motor drives, home appliances (refrigerators, washing machines), fans, pumps, vacuum cleaners, and other hard switching applications.

Product Attributes

  • Brand: AOS (Alpha & Omega Semiconductor)
  • Technology: AlphaIGBT ( IGBT)
  • Package Type: TO-252 (DPAK)
  • Moisture Level: Level 1
  • Product Categorization: Consumer Market

Technical Specifications

Parameter Symbol Condition Min Typ Max Units
Collector-Emitter Breakdown Voltage BVCES TJ=25C 650 - - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=25C, IC=5A, VGE=15V - 1.57 1.98 V
Collector-Emitter Saturation Voltage VCE(sat) TJ=125C, IC=5A, VGE=15V - 1.87 - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=150C, IC=5A, VGE=15V - 1.95 - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=25C, IC=10A, VGE=15V - 1.8 2.25 V
Collector-Emitter Saturation Voltage VCE(sat) TJ=125C, IC=10A, VGE=15V - 1.79 - V
Collector-Emitter Saturation Voltage VCE(sat) TJ=150C, IC=10A, VGE=15V - 1.75 - V
Gate-Emitter Threshold Voltage VGE(th) IC=1mA, VCE=5V - 5.1 - V
Zero Gate Voltage Collector Current ICES VCE=650V, VGE=0V, TJ=25C - - 10 A
Zero Gate Voltage Collector Current ICES VCE=650V, VGE=0V, TJ=125C - - 100 A
Zero Gate Voltage Collector Current ICES VCE=650V, VGE=0V, TJ=150C - - 500 A
Gate-Emitter Leakage Current IGES VGE=30V - - 100 nA
Diode Forward Voltage VF IF=5A, TJ=25C - 1.8 2.25 V
Diode Forward Voltage VF IF=5A, TJ=125C - 1.79 - V
Diode Forward Voltage VF IF=5A, TJ=150C - 1.75 - V
Continuous Collector Current IC TC=25C - - 15 A
Continuous Collector Current IC TC=100C - - 10 A
Continuous Diode Forward Current IF TC=25C - - 10 A
Continuous Diode Forward Current IF TC=100C - - 5 A
Pulsed Collector Current ICM Limited by TJmax - - 15 A
Pulsed Collector Current ILM Limited by TJmax - - 15 A
Diode Pulsed Current IFM Limited by TJmax - - 15 A
Collector-Emitter Voltage VCE - - - 650 V
Gate-Emitter Voltage VGE - -30 - +30 V
Power Dissipation PD TC=25C - - 69 W
Short circuit withstanding time tSC VGE=15V, VCC400V, TJ150C - - 5 s
Junction and Storage Temperature Range TJ, TSTG - -55 - 150 C
Maximum IGBT Junction-to-Case Thermal Resistance RJC - - 1.8 - C/W
Maximum Diode Junction-to-Case Thermal Resistance RJC - - 5.5 - C/W
Maximum Junction-to-Ambient Thermal Resistance RJA - - 55 - C/W
Lead temperature for soldering purpose, 1/8" from case for 5 seconds TL - - - 300 C
Minimum Order Quantity - - 2500 - - pcs
Orderable Part Number - - AOD5B65M1 - - -

2410121614_AOS-AOD5B65M1_C176752.pdf


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