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NPN resistor equipped transistor Nexperia PDTC143ZU115 ideal for switching and controlling IC inputs

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NPN resistor equipped transistor Nexperia PDTC143ZU115 ideal for switching and controlling IC inputs

Input Resistor : 4.7kΩ

Resistor Ratio : 12

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323

Mfr. Part # : PDTC143ZU,115

Model Number : PDTC143ZU,115

Package : SOT-323

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Product Overview

The Nexperia PDTC143Z series comprises NPN resistor-equipped transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 4.7 k, R2 = 47 k) that reduce component count, simplify circuit design, and lower pick-and-place costs. They offer a 100 mA output current capability and are AEC-Q101 qualified. Ideal for digital applications in automotive and industrial segments, they serve as a cost-saving alternative to BC847/857 series in digital applications, and are suitable for controlling IC inputs and switching loads.

Product Attributes

Brand: Nexperia
Type: NPN Resistor-Equipped Transistor (RET)
Certifications: AEC-Q101 qualified

Technical Specifications

Type Number	Package	PNP Complement	Package Configuration	VCEO (V)	IO (mA)	R1 Bias Resistor (k)	R2/R1 Bias Resistor Ratio
PDTC143ZE	SOT416 (JEITA SC-75)	PDTA143ZE	ultra small	50	100	4.7	10
PDTC143ZM	SOT883 (JEITA SC-101)	PDTA143ZM	leadless ultra small	50	100	4.7	10
PDTC143ZT	SOT23 (JEDEC TO-236AB)	PDTA143ZT	small	50	100	4.7	10
PDTC143ZU	SOT323 (JEITA SC-70)	PDTA143ZU	very small	50	100	4.7	10

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	open base	-	-	50	V
IO	Output current	-	-	-	100	mA
R1	Bias resistor 1 (input)	-	3.3	4.7	6.1	k
R2/R1	Bias resistor ratio	-	8	10	12	-
VCBO	Collector-base voltage	open emitter	-	-	50	V
VEBO	Emitter-base voltage	open collector	-	-	5	V
VI	Input voltage	positive	-	-	+30	V
VI	Input voltage	negative	-	-	-5	V
ICM	Peak collector current	single pulse; tp 1 ms	-	-	100	mA
Ptot	Total power dissipation	Tamb 25 C (PDTC143ZE, SOT416)	-	-	150	mW
Ptot	Total power dissipation	Tamb 25 C (PDTC143ZM, SOT883)	-	-	250	mW
Ptot	Total power dissipation	Tamb 25 C (PDTC143ZT, SOT23)	-	-	250	mW
Ptot	Total power dissipation	Tamb 25 C (PDTC143ZU, SOT323)	-	-	200	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	+150	C
Tstg	Storage temperature	-	-65	-	+150	C
Rth(j-a)	Thermal resistance junction to ambient	PDTC143ZE (SOT416)	-	-	830	K/W
Rth(j-a)	Thermal resistance junction to ambient	PDTC143ZM (SOT883)	-	-	500	K/W
Rth(j-a)	Thermal resistance junction to ambient	PDTC143ZT (SOT23)	-	-	500	K/W
Rth(j-a)	Thermal resistance junction to ambient	PDTC143ZU (SOT323)	-	-	625	K/W
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A	-	-	1	A
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A	-	-	170	A
hFE	DC current gain	VCE = 5 V; IC = 10 mA	100	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 5 mA; IB = 0.25 mA	-	-	100	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A	-	0.6	0.5	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 5 mA	1.3	0.9	-	V
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	2.5	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	230	-	MHz

2410121805_Nexperia-PDTC143ZU-115_C282553.pdf

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