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Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent Resistor Ratio Tolerance

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Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent Resistor Ratio Tolerance

Input Resistor : 1kΩ

Resistor Ratio : 10

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23

Mfr. Part # : PDTD113ZT,215

Model Number : PDTD113ZT,215

Package : SOT-23

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Product Overview

The Nexperia PDTD113ZT is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. With a 500 mA output current capability and a 10% resistor ratio tolerance, it serves as a cost-effective alternative for digital applications, enabling control of IC inputs and switching of loads.

Product Attributes

Brand: Nexperia
Product Type: Resistor-Equipped Transistor (RET)
Technology: NPN
Package Type: SOT23
Qualification: Non-automotive qualified (as per revision history)

Technical Specifications

Parameter	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage (VCEO)	Open base	-	-	50	V
Output Current (IO)	-	-	-	500	mA
Bias Resistor R1 (Input)	-	0.7	1	1.3	k
Bias Resistor Ratio R2/R1	Tamb = 25 C	9	10	11	-
Collector-Base Voltage (VCBO)	Open emitter	-	-	50	V
Emitter-Base Voltage (VEBO)	Open collector	-	-	5	V
Input Voltage (VI)	-	-10	-	-5	V
Total Power Dissipation (Ptot)	Tamb 25 C	-	-	250	mW
Junction Temperature (Tj)	-	-	-	150	C
Ambient Temperature (Tamb)	-	-65	-	150	C
Storage Temperature (Tstg)	-	-65	-	150	C
Thermal Resistance (Rth(j-a))	In free air [1]	-	-	500	K/W
Collector-Base Cut-off Current (ICBO)	VCB = 40 V; IE = 0 A; Tamb = 25 C	-	-	100	nA
Collector-Emitter Cut-off Current (ICEO)	VCB = 50 V; IE = 0 A; Tamb = 25 C	-	-	100	nA
Collector-Emitter Cut-off Current (ICEO)	VCE = 50 V; IB = 0 A; Tamb = 25 C	-	-	0.5	A
Emitter-Base Cut-off Current (IEBO)	VEB = 5 V; IC = 0 A; Tamb = 25 C	-	-	0.8	mA
DC Current Gain (hFE)	VCE = 5 V; IC = 50 mA; Tamb = 25 C	70	-	-	-
Collector-Emitter Saturation Voltage (VCEsat)	IC = 50 mA; IB = 2.5 mA; Tamb = 25 C	-	-	300	mV
Off-State Input Voltage (VI(off))	VCE = 5 V; IC = 100 A; Tamb = 25 C	0.3	0.6	1	V
On-State Input Voltage (VI(on))	VCE = 0.3 V; IC = 20 mA; Tamb = 25 C	0.4	0.8	1.4	V
Collector Capacitance (Cc)	VCB = 10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C	-	7	-	pF

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

2410010331_Nexperia-PDTD113ZT-215_C168861.pdf

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