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NPN Transistor with Built In Bias Resistors and 100 Milliamp Output Current Nexperia PDTC114EU 115

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NPN Transistor with Built In Bias Resistors and 100 Milliamp Output Current Nexperia PDTC114EU 115

Input Resistor : 10kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-70

Mfr. Part # : PDTC114EU,115

Model Number : PDTC114EU,115

Package : SC-70

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Product Overview

The Nexperia PDTC114EU is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. Featuring built-in bias resistors (R1 = 10 k, R2 = 10 k), this component simplifies circuit design, reduces component count, and lowers pick-and-place costs. It offers an output current capability of 100 mA and is AEC-Q101 qualified, making it a cost-saving alternative for BC847/857 series in digital applications and suitable for switching loads and controlling IC inputs.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Resistor-Equipped Transistor (RET)
  • Certifications: AEC-Q101 Qualified
  • Package Type: SOT323 (SC-70)
  • Internal Resistors: R1 = 10 k, R2 = 10 k

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 7 10 13 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage - -10 - 40 V
Ptot Total power dissipation Tamb 25 C - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient in free air - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 2.5 1.8 - V
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C - 230 - MHz

2410010303_Nexperia-PDTC114EU-115_C135830.pdf


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