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NPN Resistor Equipped Transistor Nexperia PDTC114ET235 for Switching Loads and Controlling IC Inputs

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NPN Resistor Equipped Transistor Nexperia PDTC114ET235 for Switching Loads and Controlling IC Inputs

Emitter-Base Voltage VEBO : 10V

Input Resistor : 10kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23

Mfr. Part # : PDTC114ET,235

Model Number : PDTC114ET,235

Package : SOT-23

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Product Overview

The Nexperia PDTC114ET is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This transistor offers a 100 mA output current capability and serves as a cost-saving alternative to the BC847 series in digital applications. It is suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistor (RET)
  • PNP Complement: PDTA114ET
  • Package Type: SOT23
  • Mounting Type: Surface-Mounted Device (SMD)
  • Material: Plastic

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
VCBO Collector-base voltage open emitter - - 50 V
VCEO Collector-emitter voltage open base - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage positive - - 40 V
VI Input voltage negative -10 - - V
IO Output current - - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 500 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.8 1.1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 1.8 2.5 - V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.


2410121948_Nexperia-PDTC114ET-235_C552152.pdf


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