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NPN Surface Mount Transistor CBI MMUN5214DW Dual Bias Resistor with Base Emitter Resistor Integration

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NPN Surface Mount Transistor CBI MMUN5214DW Dual Bias Resistor with Base Emitter Resistor Integration

Output Voltage(VO(on)) : 200mV

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 385mW Surface Mount SOT-363

Mfr. Part # : MMUN5214DW

Model Number : MMUN5214DW

Package : SOT-363

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Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their associated bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount applications where space is critical. The series offers various resistor value combinations to suit diverse application needs. These devices comply with RoHS requirements.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Material Compliance: RoHS requirements
Package Type: SOT-363

Technical Specifications

Model	Device Marking	R1 (K)	R2 (K)	Shipping (Units/Reel)	DC Current Gain (hFE) Min. (VCE=10V, IC=5mA)	Collector Current (IC) Max.	Collector-Emitter Voltage (VCEO) Max.	Collector-Base Voltage (VCBO) Max.	Collector-Emitter Saturation Voltage (VCEsat) Max. (V)	Output Voltage (on) (VOL) Max. (V)	Output Voltage (off) (VOH) Min. (V)
MMUN5211DW	7A	10	10	3000	35	100 mA	50 V	50 V	0.25 (IC=10mA, IB=0.3mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5212DW	7B	22	22	3000	60	100 mA	50 V	50 V	0.25 (IC=10mA, IB=0.3mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5213DW	7C	47	47	3000	80	100 mA	50 V	50 V	0.25 (IC=10mA, IB=0.3mA)	0.2 (VCC=5V, VB=3.5V, RL=1K)	4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5214DW	7D	10	47	3000	80	100 mA	50 V	50 V	0.25 (IC=10mA, IB=0.3mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5215DW	7E	10	-	3000	160	100 mA	50 V	50 V	0.25 (IC=10mA, IB=5mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5216DW	7F	4.7	-	3000	160	100 mA	50 V	50 V	0.25 (IC=10mA, IB=5mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5230DW	7G	1	1	3000	3	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5231DW	7H	2.2	2.2	3000	8	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5232DW	7J	4.7	4.7	3000	15	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5233DW	7K	4.7	47	3000	80	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5234DW	7L	22	47	3000	80	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5235DW	7M	2.2	47	3000	80	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5238DW	7Q	2.2	-	3000	160	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=2.5V, RL=1K)	4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5241DW	7X	100	-	3000	160	100 mA	50 V	50 V	0.25 (IC=10mA, IB=1mA)	0.2 (VCC=5V, VB=5V, RL=1K)	4.9 (VCC=5V, VB=0.5V, RL=1K)

Characteristic	Symbol	Value	Unit	Notes
Total Device Dissipation (One Junction Heated)	P_D	187	mW	T_A=25C
Thermal Resistance Junction-to-Ambient (One Junction Heated)	R_JA	670	C/W	FR4 @ Minimum Pad
Total Device Dissipation (One Junction Heated)	P_D	250	mW	T_A=25C
Thermal Resistance Junction-to-Ambient (One Junction Heated)	R_JA	490	C/W	FR4 @ 1.0 x 1.0 inch Pad
Total Device Dissipation (Both Junctions Heated)	P_D	250	mW	T_A=25C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated)	R_JA	493	C/W	FR4 @ Minimum Pad
Total Device Dissipation (Both Junctions Heated)	P_D	385	mW	T_A=25C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated)	R_JA	325	C/W	FR4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Lead	R_JL	188	C/W	Note 1
Thermal Resistance Junction-to-Lead	R_JL	208	C/W	Note 2
Junction and Storage Temperature	T_J, T_stg	-55 to +150	C
Collector Base Cutoff Current	I_CBO	-100	nA	V_CB = 50 V
Collector Emitter Cutoff Current	I_CEO	-500	nA	V_CE = 50 V
Emitter Base Cutoff Current	I_EBO	0.5 to 4.3	mA	V_EB = 6 V (See specific models in table)
Collector Base Breakdown Voltage	V_(BR)CBO	50	V	I_C = 10 A
Collector Emitter Breakdown Voltage	V_(BR)CEO	50	V	I_C = 2 mA

2410121707_CBI-MMUN5214DW_C21714281.pdf

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