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Ultra high speed switching silicon epitaxial planar diode KEC KDS187-RTK P with small SOT 23 package

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Ultra high speed switching silicon epitaxial planar diode KEC KDS187-RTK P with small SOT 23 package

Reverse Leakage Current (Ir) : 500nA@80V

Reverse Recovery Time (trr) : 1.6ns

Operating Junction Temperature Range : -

Voltage - DC Reverse (Vr) (Max) : 80V

Diode Configuration : Independent

Voltage - Forward(Vf@If) : 920mV@100mA

Current - Rectified : 100mA

Description : 1.6ns 80V Independent 920mV@100mA 100mA SOT-23 Single Diodes RoHS

Mfr. Part # : KDS187-RTK/P

Model Number : KDS187-RTK/P

Package : SOT-23

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Product Overview

The KDS187 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small SOT-23 package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix U indicates qualification to AEC-Q101 standards.

Product Attributes

Type: SILICON EPITAXIAL PLANAR DIODE
Application: ULTRA HIGH SPEED SWITCHING APPLICATION
Package: SOT-23
Qualification: AEC-Q101 (Suffix U)

Technical Specifications

Characteristic	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Forward Voltage	VF(1)	IF=1mA	-	0.61	-	V
Forward Voltage	VF(2)	IF=10mA	-	0.74	-	V
Forward Voltage	VF(3)	IF=100mA	-	0.92	1.20	V
Reverse Current	IR	VR=80V	-	-	0.5	A
Total Capacitance	CT	VR=0, f=1MHz	-	2.2	4.0	pF
Reverse Recovery Time	trr	IF=10mA	-	1.6	4.0	nS

Maximum Ratings

Characteristic	Symbol	Rating	Unit
Maximum (Peak) Reverse Voltage	VRM	85	V
Reverse Voltage	VR	80	V
Maximum (Peak) Forward Current	IFM	300	mA
Average Forward Current	IO	100	mA
Surge Current (10ms)	IFSM	2	A
Power Dissipation	PD	150	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Dimensions (SOT-23)

Dimension	Value (mm)
A	2.93
B	0.20
C	1.30+0.20/-0.15
D	0.40+0.15/-0.05
E	2.40+0.30/-0.20
G	1.90
H	0.95
J	0.13+0.10/-0.05
K	0.00 ~ 0.10
L	0.55
M	0.1 MAX
N	0.20 MIN
P	1.00+0.20/-0.10
Q	1.30 MAX

Pin Configuration (SOT-23)

NC
CATHODE
ANODE

2411220042_KEC-KDS187-RTK-P_C294627.pdf

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